N/P-channel Trench MOSFET
Description
DF N1 0
PMCXB900UE
7 October 2013
10B -6
20 V, complementary N/P-channel Trench MOSFET
Product data sheet
1. General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
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