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DATA SHEET
SILICON POWER TRANSISTOR
2SB601
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
FEATURES
• High-DC current gain due to Darlington connection • Low collector saturation voltage • Low collector cutoff current • Ideal for use in direct drive from IC output for magnet drivers such as treminal equipment or cash registers
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current Base current Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Ta = 25°C) PT (Tc = 25°C) Tj Tstg Ratings −100 −100 −7. 0 – +5. 0 – +8. 0 −0. 5 1. 5 30 150 −55 to +150 Unit V V V A A A W W °C °C
(/(&752'( &211(&7,21
* PW ≤ 10 ms, duty cycle ≤ 50%
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