DatasheetsPDF.com

C2M1000170D

Cree
Part Number C2M1000170D
Manufacturer Cree
Description Silicon Carbide Power MOSFET
Published Mar 12, 2014
Detailed Description VDS 1700 V C2M1000170D ID @ 25˚C 5.0 A Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS(on) 1.0 Ω N-Cha...
Datasheet PDF File C2M1000170D PDF File

C2M1000170D
C2M1000170D

Overview
VDS 1700 V C2M1000170D ID @ 25˚C 5.
0 A Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS(on) 1.
0 Ω N-Channel Enhancement Mode Feature s Package • High Speed Switching with Low Capacitances • High Blocking Voltage with Low RDS(on) • Easy to Parallel and Simple to Drive • Ultra-low Drain-gate capacitance • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Increased System Switching Frequency • Reduced Cooling Requirements • Increased System Reliability TO-247-3 Applications • Auxiliary Power Supplies • Switch Mode Power Supplies • High-voltage Capacitive Loads Ordering Part Number C2M1000170D Package TO-247-3 Marking C2M1000170 Maxim...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)