600V N-Channel MOSFET
Description
HFS2N60
July 2005
BVDSS = 600 V
HFS2N60
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8 8.5 5 nC (Typ (Typ.) )
RDS(on) typ = 4.0 Ω ID = 2.0 A
TO-220F
1
2
3
1.Gate 2. Drain 3...
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