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C5368

Toshiba Semiconductor
Part Number C5368
Manufacturer Toshiba Semiconductor
Description 2SC5368
Published Apr 22, 2014
Detailed Description 2SC5368 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5368 High-Voltage Switching Applications Switching Regul...
Datasheet PDF File C5368 PDF File

C5368
C5368

Overview
2SC5368 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5368 High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • • • High speed: tr = 0.
5 μs (max), tf = 0.
3 μs (max) (IC = 0.
8 A) High breakdown voltage: VCEO = 450 V High DC current gain: hFE = 20 (min) (IC = 0.
2 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 650 450 7 2 4 0.
5 1.
5 10 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-8H1A Weight: 0.
82 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operatin...


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