Silicon N-Channel IGBT
Description
GT60J323
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60J323
Current Resonance Inverter Switching Application
Enhancement mode type High speed : tf = 0.16 μs (typ.) (IC = 60A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A) FRD included between emitter and collector Fourth generation IGBT TO-3P(LH) (Toshiba pack...
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