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IRGBC20F

International Rectifier
Part Number IRGBC20F
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Jul 12, 2014
Detailed Description PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Op...
Datasheet PDF File IRGBC20F PDF File

IRGBC20F
IRGBC20F

Overview
PD - 9.
686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency ( 1 to 10kHz) See Fig.
1 for Current vs.
Frequency curve G E C Fast Speed IGBT VCES = 600V VCE(sat) ≤ 2.
8V @VGE = 15V, IC = 9.
0A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25...


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