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FLM7785-6F

SUMITOMO

C-Band Internally Matched FET


Description
FLM7785-6F C-Band Internally Matched FET FEATURES High Output Power: P1dB = 38.5dBm (Typ.) High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM7785-6F is a power GaAs FET that is internally matched for standard ...



SUMITOMO

FLM7785-6F

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