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C5811

Sanyo Semicon Device
Part Number C5811
Manufacturer Sanyo Semicon Device
Description 2SC5811
Published Jul 14, 2014
Detailed Description Ordering number : ENN7415 2SC5811 NPN Triple Diffused Planar Silicon Transistor 2SC5811 Ultrahigh-Definition CRT Displ...
Datasheet PDF File C5811 PDF File

C5811
C5811

Overview
Ordering number : ENN7415 2SC5811 NPN Triple Diffused Planar Silicon Transistor 2SC5811 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions unit : mm 2174A [2SC5811] 16.
0 5.
0 High speed.
High breakdown voltage : VCBO=1600V.
High reliability(Adoption of HVP process).
Adoption of MBIT process.
3.
4 5.
6 3.
1 8.
0 22.
0 21.
0 4.
0 2.
8 2.
0 20.
4 0.
7 0.
9 1 2 5.
45 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ...


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