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NX3008NBKS

NXP Semiconductors
Part Number NX3008NBKS
Manufacturer NXP Semiconductors
Description 350mA dual N-channel Trench MOSFET
Published Aug 18, 2014
Detailed Description NX3008NBKS 30 V, 350 mA dual N-channel Trench MOSFET Rev. 1 — 1 August 2011 Product data sheet 1. Product profile 1.1 G...
Datasheet PDF File NX3008NBKS PDF File

NX3008NBKS
NX3008NBKS

Overview
NX3008NBKS 30 V, 350 mA dual N-channel Trench MOSFET Rev.
1 — 1 August 2011 Product data sheet 1.
Product profile 1.
1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits  Very fast switching  Low threshold voltage  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.
3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits 1.
4 Quick reference data Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.
5 V; Tamb = 25 °C VGS = 4.
5 V; ID = 350 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ 1 Max 30 8 350 1.
4 Unit V V mA Ω Per transistor Static characteristics (per transistor) [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single...


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