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K1933

Hitachi Semiconductor
Part Number K1933
Manufacturer Hitachi Semiconductor
Description 2SK1933
Published Sep 1, 2014
Detailed Description 2SK1933 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed...
Datasheet PDF File K1933 PDF File

K1933
K1933

Overview
2SK1933 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline TO-3P D G 1 2 3 1.
Gate 2.
Drain (Flange) 3.
Source S 2SK1933 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 900 ±30 10 30 10 150 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1933 Electrical Charac...


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