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GT80J101B

Toshiba Semiconductor
Part Number GT80J101B
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Sep 3, 2014
Detailed Description GT80J101B TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101B High Power Switching Applications ...
Datasheet PDF File GT80J101B PDF File

GT80J101B
GT80J101B

Overview
GT80J101B TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101B High Power Switching Applications • • • Enhancement mode type High speed: tf = 0.
40 µs (max) (I C = 80 A) Low saturation voltage: V CE (sat) = 2.
9 V (max) (I C = 80 A) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current @Tc = 100°C @Tc = 25°C Symbol VCES VGES IC ICP Rating 600 ± 20 33 80 160 80 PC 200 3.
5 Tj Tstg  150 − 55~150 0.
8 °C °C N·m W A Unit V V A Pulsed collector current (Note 1) @Tc = 100°C Collector power dissipation Junction temperature Storage temperature Screw torque @Tc = 25°C @Ta = 25°C JEDEC JEITA TOSHIBA ? ? ...


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