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SSS5N20

South Sea Semiconductor
Part Number SSS5N20
Manufacturer South Sea Semiconductor
Description Dual N-Channel MOSFET
Published Sep 18, 2014
Detailed Description SSS5N20 Dual N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 30 @VGS = 4.5V 20V 4A 45...
Datasheet PDF File SSS5N20 PDF File

SSS5N20
SSS5N20

Overview
SSS5N20 Dual N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 30 @VGS = 4.
5V 20V 4A 45 @VGS = 2.
5V D1 (2, 5) 1 TSOP-6 D2 (2, 5) FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount package.
G1(6) S1(1) G2(4) S2(3) ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit 20 + - 10 4 25 2 1.
25 -55 to 150 Unit V V A A A W o Drain-Source Diode Forward Current Maximum Power Dissipation a IS PD TJ, TSTG Operating Junction and Storage Temperature Range C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 100 o C/W South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice.
South Sea Semiconductor, October 2005 (Rev 2.
1) 1 SSS5N20 Electrical Characteristics (TA = 25 C unless otherwise ...


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