Dual N-Channel Enhancement Mode Field Effect Transistor
Description
STS8235
S a mHop Microelectronics C orp.
Ver 1.0
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
30V
F E AT UR E S S uper high dense cell design for low R DS (ON ).
ID
4.5A
R DS(ON) (m Ω) Max
36 @ VGS=4.5V 46 @ VGS=2.5V
R ugged and reliable. S urface Mount P ackage. E S D P rotected.
S OT26 Top View
D1
D2
S1 D1/D2 S2
...
Similar Datasheet