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AO3407

30V P-Channel MOSFET

Description

AO3407 30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@ 4.1A < 64.5m Ω RDS(ON), Vgs@-4.5V, Ids@-3.0A < 87m Ω Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L G REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 R...

JinYu

AO3407 PDF File

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