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BDT62B

Part Number	BDT62B
Manufacturer	INCHANGE
Description	Silicon PNP Darlington Power Transistors
Published	Oct 31, 2014
Detailed Description	isc Silicon PNP Darlington Power Transistors BDT62/A/B/C DESCRIPTION ·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Colle...
Datasheet	BDT62B PDF File

Overview

isc Silicon PNP Darlington Power Transistors BDT62/A/B/C DESCRIPTION ·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C ·Complement to Type BDT63/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT62 -60 VCBO Collector-Base Voltage BDT62A BDT62B -80 -100 BDT62C -120 BDT62 -60 VCEO Collector-Emitter Voltage BDT62A BDT62B -80 -100...

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