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3DD13001B

Part Number	3DD13001B
Manufacturer	JCST
Description	TO-92 Plastic-Encapsulate Transistors
Published	Nov 29, 2014
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN) FEA...
Datasheet	3DD13001B PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN) FEATURE · power switching applications TO-92 1.
BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7V IC Collector Current -Continuous 0.
2 A PC Collector Power Dissipation 0.
75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2.
COLLECTOR 3.
EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base break...

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