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FX504

Sanyo Semicon Device
Part Number FX504
Manufacturer Sanyo Semicon Device
Description High-Current Switching Applications
Published Mar 23, 2005
Detailed Description Ordering number:EN4904 FX504 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Features · Co...
Datasheet PDF File FX504 PDF File

FX504
FX504

Overview
Ordering number:EN4904 FX504 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Features · Composite type with 2 NPN transistors contained in one package, facilitating high-density mounting.
· The FX504 houses two chips, each being equivalent to the 2SD1802, in one package.
· Matched pair characteristics.
Package Dimensions unit:mm 2118 [FX504] 1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 SANYO:XP6 (Bottom view) Switching Time Test CIrcuit Electrical Connection 1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 (Top view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg Mounted on ceramic board (750mm2×0.
8mm) 1 unit Mounted on ceramic board (750mm2×0.
8mm) Conditions Ratings 60 50 6 3 6 600 1.
5 2 150 –55 to +150 Unit V V V A A mA W W ˚C ˚C · Marking:504 Continued on next page.
SANYO Electric Co.
,Ltd.
Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/42695MO (KOTO) BX-1459 No.
4904-1/4 FX504 Continued from preceding page.
Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE1 hFE2 hFE(small/ large) fT Co b VCE(sat) VBE(sat) VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100mA VCE=2V, IC=–3A VCE=2V, IC=100mA VCE=10V, IC=100mA VCB=10V, f=1MHz IC=2A, IB=100mA 60 50 6 70 650 35 140 35 0.
8 170 25 190 0.
94 500 1.
2 MHz pF mV V V V V ns ns ns Conditions Ratings min typ max 1 1 400 Un...


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