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2SAR574D

Rohm
Part Number 2SAR574D
Manufacturer Rohm
Description PNP -2.0A -80V Middle Power Transistor
Published Apr 21, 2015
Detailed Description 2SAR574D PNP -2.0A -80V Middle Power Transistor Parameter VCEO IC Value -80V -2A lFeatures 1) Suitable for Middle Pow...
Datasheet PDF File 2SAR574D PDF File

2SAR574D
2SAR574D

Overview
2SAR574D PNP -2.
0A -80V Middle Power Transistor Parameter VCEO IC Value -80V -2A lFeatures 1) Suitable for Middle Power Driver.
2) Complementary NPN Types : 2SCR574D.
3) Low VCE(sat) 　　VCE(sat)=-0.
40V(Max.
).
　　(IC/IB=-1A/-50mA) 4) Lead Free/Rohs Compliant lOutline CPT 　 　 2SAR574D 　 　 　 　 　　　　　　　　 lInner circuit Datasheet 　 　 B: BASE C: COLLECTOR E: EMITTER lApplication Motor driver,LED driver Power supply lPackaging specifications Part No.
Package Package size 2SAR574D CPT 6595 　　　　　　　　　　　　　　　　　　　　　　 Taping code Reel size Tape width (mm) (mm) Basic ordering unit.
(pcs) Marking TL 330 16 2500 AR574 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.
rohm.
com © 2013 ROHM Co.
, Ltd.
All rights reserved.
1/6 20131120 - Rev.
001 2SAR574D 　 　 　 　　 　 lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Power dissipation Junction temperature Range of storage temperature 　 　 　 　 　 　 　 　 Datasheet Symbol VCBO VCEO VEBO IC ICP*1 IB PD*2 Tj Tstg Values -80 -80 -6 -2 -4 -0.
5 10 150 -55 to +150 Unit V V V A A A W ℃ ℃ lElectrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Symbol Conditions BVCBO IC = -100μA BVCEO IC = -1mA BVEBO ICBO IEBO VCE(sat) hFE f *3 T IE = -100μA VCB = -80V VEB = -4V IC = -1A, IB = -50mA VCE = -3V, IC = -100mA VCE = -10V, IE = 500mA, f = 100MHz Min.
-80 -80 -6 120 - Values Typ.
- - -200 - 280 Max.
- -1 -1 -400 390 - Output capacitance Cob VCB = -10V, IE = 0A, f = 1MHz Turn-On time Storage time Fall time ton*4 IC = -1A, VCC = -10V tstg*4 IB1 = -100mA tf*4 IB2 = 100mA *1　Pw=10ms 1PULSE *2　Tc=25℃ *3　PULSED *4　SEE SWITCHING TIME TEST CIRCUIT - 30 - - 50 ...


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