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FTD2012

Part Number	FTD2012
Manufacturer	Sanyo Semicon Device
Description	N- Channel Silicon MOS FET Load S/W USE
Published	Mar 23, 2005
Detailed Description	FTD2012 N- Channel Silicon MOS FET Load S/W USE TENTATIVE Features • Low ON-state resistance. • 4V drive. • Mount height...
Datasheet	FTD2012 PDF File

Overview

FTD2012 N- Channel Silicon MOS FET Load S/W USE TENTATIVE Features • Low ON-state resistance.
• 4V drive.
• Mount height of 1.
1mm.
• Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Total Dissipation Channel Temperature Storage Temperature Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn...

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