N-Channel MOSFET
Description
HFP830
June 2005
HFP830
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ ȍ ID = 4.5 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 18 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ...
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