N-Channel MOSFET
Description
HFP10N60
HFP10N60
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.64 Ω (Typ.) @VGS=10V
Nov 2005
BVDSS = 600 V RDS(on)...
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