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C5307

Part Number	C5307
Manufacturer	Toshiba
Description	2SC5307
Published	Jun 11, 2015
Detailed Description	TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5307 High Voltage Switching Applications 2SC5307 Unit: mm • Hig...
Datasheet	C5307 PDF File

Overview

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5307 High Voltage Switching Applications 2SC5307 Unit: mm • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE (sat) = 0.
4 V (typ.
) (IC = 20 mA, IB = 0.
5 mA) Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Ta = 25°C (Note) Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 400 400 7 50 100 25 500 1000 150 −55 to 150 Note: Mounted on a ceramic substrate (250 mm2 × 0.
8 t) Unit V V V mA mA mW °C °C Electrical Characte...

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