P-Channel MOSFET
Description
FDC3535 P-Channel Power Trench® MOSFET
FDC3535
P-Channel Power Trench® MOSFET
-80 V, -2.1 A, 183 mΩ
June 2010
Features
General Description
Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a ...
Fairchild Semiconductor
FDC3535 PDF File
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