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WFF630

Winsemi
Part Number WFF630
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Oct 12, 2015
Detailed Description WFF630 Silicon N-Channel MOSFET Features ■ 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 22nC) ■ ...
Datasheet PDF File WFF630 PDF File

WFF630
WFF630

Overview
WFF630 Silicon N-Channel MOSFET Features ■ 9A, 200V, RDS(on)(Max 0.
4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 22nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL D...


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