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IXFH6N90

IXYS
Part Number IXFH6N90
Manufacturer IXYS
Description Power MOSFETs
Published Jan 8, 2016
Detailed Description HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM6N90 IXFH/IXFM6N100 V...
Datasheet PDF File IXFH6N90 PDF File

IXFH6N90
IXFH6N90

Overview
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM6N90 IXFH/IXFM6N100 V DSS 900 V 1000 V I D25 6A 6A trr £ 250 ns R DS(on) 1.
8 W 2.
0 W Symbol VDSS V DGR VGS VGSM ID25 IDM I AR EAR dv/dt PD T J TJM T stg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Maximum Ratings TO-247 AD (IXFH) TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s Mounting torque 6N90 6N100 900 1000 ±20 ±30 6 24 6 18 5 V V V V A A ...


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