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1SS110

Hitachi Semiconductor
Part Number 1SS110
Manufacturer Hitachi Semiconductor
Description Silicon Diode
Published Mar 23, 2005
Detailed Description 1SS110 Silicon Epitaxial Planar Diode for Tuner Band Switch ADE-208-179B (Z) Rev. 2 Features • Low forward resistance. ...
Datasheet PDF File 1SS110 PDF File

1SS110
1SS110

Overview
1SS110 Silicon Epitaxial Planar Diode for Tuner Band Switch ADE-208-179B (Z) Rev.
2 Features • Low forward resistance.
(r f = 0.
9 Ω max) • Suitable for 5mm pitch high speed automatical insertion.
• Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information Type No.
1SS110 Cathode band Verdure Package Code MHD Outline 1 Cathode band 2 1.
Cathode 2.
Anode 1SS110 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Junction temperature Storage temperature Symbol VR IF Tj Tstg Value 35 100 175 –65 to +175 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse voltage Reverse current Capacitance Forward resistance Symbol VF VR IR C rf Min — 35 — — — Typ — — — — — Max 1.
0 — 0.
1 1.
2 0.
9 Unit V V µA pF Ω Test Condition I F = 10mA I R = 10µA VR = 25V VR = 6V, f = 1MHz I F = 2mA, f = 100MHz 1SS110 10 –2 10 Forward current I F (A) –4 10–6 10 –8 10 –10 10 –12 0 0.
2 0.
4 0.
6 0.
8 1.
0 Forward voltage VF (V) Fig.
1 Forward current Vs.
Forward voltage 10 f = 1MHz Capacitance C (pF) 1.
0 10 –1 1.
0 10 Reverse voltage VR (V) 40 Fig.
2 Capacitance Vs.
Reverse voltage 1SS110 10 2 f = 100MHz Forward resistance r f (Ω ) 10 1.
0 10 –1 10 –2 10 –4 10–3 10–2 10 –1 Forward current I F (A) Fig.
3 Forward resistance Vs.
Forward current 1SS110 Package Dimensions Unit: mm 26.
0 Min 2.
4 Max 26.
0 Min φ 2.
0 Max φ 0.
4 1 2 Cathode band (Verdure) 1 Cathode 2 Anode HITACHI Code JEDEC Code EIAJ Code Weight (g) MHD DO-34 — 0.
084 ...


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