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1SV304

Toshiba Semiconductor
Part Number 1SV304
Manufacturer Toshiba Semiconductor
Description Variable Capacitance Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV304 1SV304 VCO for VHF Band Radio • Small package...
Datasheet PDF File 1SV304 PDF File

1SV304
1SV304

Overview
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV304 1SV304 VCO for VHF Band Radio • Small package • High capacitance ratio: C1 V/C4 V = 3.
0 (typ.
) • Low series resistance: rs = 0.
27 Ω (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C Tstg −55~125 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are...


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