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1SV312

Toshiba Semiconductor
Part Number 1SV312
Manufacturer Toshiba Semiconductor
Description Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Pin Type 1SV312 VHF~UHF Band RF Attenuator Applications · Two independent diodes mounte...
Datasheet PDF File 1SV312 PDF File

1SV312
1SV312

Overview
TOSHIBA Diode Silicon Epitaxial Pin Type 1SV312 VHF~UHF Band RF Attenuator Applications · Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design.
· Low capacitance: CT = 0.
25 pF (typ.
) · Low series resistance: rs = 3 Ω (typ.
) Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 50 50 125 -55~125 Unit V mA °C °C 1SV312 Unit: mm Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Forward voltage Total capacitance Series resistance Symbol VR IR VF CT rs Test Condition IR = 10 mA VR = 50 V IF ...


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