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1SV314

Toshiba Semiconductor
Part Number 1SV314
Manufacturer Toshiba Semiconductor
Description Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SV314 1SV314 VCO for UHF Band Radio z High Capacitance Ratio : C0.5 V / C...
Datasheet PDF File 1SV314 PDF File

1SV314
1SV314

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SV314 1SV314 VCO for UHF Band Radio z High Capacitance Ratio : C0.
5 V / C2.
5 V = 2.
5 (Typ.
) z Low Series Resistance : rs = 0.
35 Ω (Typ.
) z Useful for Small Size Tuner Unit: mm Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage Junction Temperature Storage Temperature Range VR 10 V Tj 125 °C Tstg −55~125 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltag...


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