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CED6042

CET
Part Number CED6042
Manufacturer CET
Description N-Channel MOSFET
Published Feb 9, 2016
Detailed Description CED6042/CEU6042 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 90A , RDS(ON) = 5mΩ @VGS...
Datasheet PDF File CED6042 PDF File

CED6042
CED6042

Overview
CED6042/CEU6042 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 90A , RDS(ON) = 5mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 90 IDM 360 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 74 0.
6 Single Pulsed Avalanche Energy d EAS 400 Single Pulsed Avalanche Current d IAS 40 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.
7 50 Units V V A A W W/ C mJ A C Units C/W C/W This is preliminary information on a new product in development now .
Details are subject to change without notice .
1 Rev 1.
2013.
Mar http://www.
cetsemi.
com CED6042/CEU6042 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 30A Forward Transconductance Dynamic Characteristics c Rg f=1MHz,open Drain Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.
0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 30V, ID = 20A, VGS = 10V, RGEN = 3.
6Ω Turn-Off Fall T...


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