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PXFC192207NF

Infineon
Part Number PXFC192207NF
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
Published Feb 19, 2016
Detailed Description PXFC192207NF Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207NF is a...
Datasheet PDF File PXFC192207NF PDF File

PXFC192207NF
PXFC192207NF

Overview
PXFC192207NF Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207NF is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band.
Features include input and output matching, high gain and a thermally-enhanced plastic package.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1600 mA, VGS = 2.
75 V, ƒ = 1875 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.
84 MHz 21 56 20 Gain 48 19 40 18 32 17 24 16 ...


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