DatasheetsPDF.com

6N65

Unisonic Technologies
Part Number 6N65
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Published Feb 19, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 6N65 6.2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N65 is a high voltage power...
Datasheet PDF File 6N65 PDF File

6N65
6N65

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 6N65 6.
2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.
This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.
 FEATURES * RDS(ON) < 1.
7Ω @VGS = 10V * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 6N65L-TA3-T 6N65G-TA3-T TO-220 6N65L-TF3-T 6N65G-TF3-T TO-220F 6N65L-TF1-T 6N65G-TF1-T TO-220F1 6N65L-TF2-T 6N65G-TF2-T TO-220F2 6N65L-TF3T-T 6N65G-TF3T-T TO-220F3 6N65L-TM3-T 6N65G-TM3-T TO-251 6N65L-TMS-T 6N65G-TMS-T TO-251S 6N65L-TN3-T 6N65G-TN3-T TO-252 6N65L-TN3-R 6N65G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12 3 GD S GD S GD S GD S GD S GD S GD S GD S GD S Packing Tube Tube Tube Tube Tube Tube Tube Tube Tape Reel www.
unisonic.
com.
tw Copyright © 2014 Unisonic Technologies Co.
, Ltd 1 of 7 QW-R502-589.
H 6N65  MARKING INFORMATION PACKAGE TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO-251S TO-252 Power MOSFET MARKING UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw 2 of 7 QW-R502-589.
H 6N65 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) Continuous Drain Current IAR 6.
2 A ID 6.
2 A Pulsed Drain Current (Note 2) Avalanche Energy Single Pulsed (Note 3) IDM EAS 24.
8 A 440 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.
5 ns TO-220 125 W Power Dissipation TO-220F/TO-220F1 TO-220F3 TO-220F2 PD 40 W 42 W TO-251/TO-251S TO-252 55 W Junction Temperature TJ +150 °C Operating Temperature S...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)