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CHA3666

United Monolithic Semiconductors
Part Number CHA3666
Manufacturer United Monolithic Semiconductors
Description GaAs Monolithic Microwave
Published Mar 4, 2016
Detailed Description CHA3666 RoHS COMPLIANT 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA3666 is a two-stage...
Datasheet PDF File CHA3666 PDF File

CHA3666
CHA3666

Overview
CHA3666 RoHS COMPLIANT 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier.
VD1 The circuit is manufactured with a standard pHEMT process: 0.
25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
RFin VD2 RFout UMS P1 P2 N2 Main Features 24,0 ■ Broadband performance 6-17GHz ■ 1.
8dB noise figure ■ 26dBm 3rd order intercept point ■ 17dBm power at 1dB compression ■ 21dB gain 22,0 20,0 18,0 16,0 14,0 12,0 10,0 ■ Low DC power consumption 8,0 6,0 4,0 2,0 0,0 Main Characteristics 4,00 Temp = +25°C, Vd1=Vd2= +4V Pads: P1, N2=GND Gain 6,00 8,00 NF 10,00 12,00 14,00 16,00 18,00 Symbol Parameter NF Noise figure G Gain IP3 3rd order intercept point Min Typ Max Unit 1.
8 2 dB 19 21 dB 26 dBm ESD Protections: Electrostatic discharge sensitive device observe handling precautions! Ref.
: DSCHA3666-8108 - 17 Apr 08 1/8 Specificatio...


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