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B679

INCHANGE
Part Number B679
Manufacturer INCHANGE
Description Silicon PNP Power Transistor
Published Mar 13, 2016
Detailed Description INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SB679 DESCRIPTION ·High Power Dissi...
Datasheet PDF File B679 PDF File

B679
B679

Overview
INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SB679 DESCRIPTION ·High Power Dissipation- : PC= 100W(Max.
)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.
) ·Complement to Type 2SC1079 APPLICATIONS ·Designed for audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IE Emitter Current-Continuous Collector Power Dissipation PC @TC=25℃ Tj Junction Temperature Tstg Storage Temperature -120 V -5 V -12 A 12 A 100 W 150 ℃ -65~150 ℃ isc Website：www.
iscsemi.
cn INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SB679 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100mA ;IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10mA ;IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A VBE(on) Base-Emitter On Voltage IC= -10A ; VCE= -5V ICBO Collector Cutoff Current VCB= -50V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -2A ; VCE= -5V hFE-2 DC Current Gain IC= -7A ; VCE= -5V COB Output Capacitance fT Current-Gain—Bandwidth Product VCB= -10V; ftest= 1MHz IC= -2A ; VCE= -5V MIN TYP.
MAX UNIT -120 V -5 V -3.
0 V -2.
5 V -0.
1 mA -0.
1 mA 40 140 15 900 pF 6 MHz ‹ hFE-1 Classifications RY 40-80 70-140 isc Website：www.
iscsemi.
cn ...


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