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KDR367E

KEC
Part Number KDR367E
Manufacturer KEC
Description SCHOTTKY BARRIER TYPE DIODE
Published Mar 21, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES Low Forward Voltage : VF(2)=0.23V (Typ.) Small P...
Datasheet PDF File KDR367E PDF File

KDR367E
KDR367E


Overview
SEMICONDUCTOR TECHNICAL DATA LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES Low Forward Voltage : VF(2)=0.
23V (Typ.
) Small Package : ESC.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage VRM VR 15 10 Maximum (Peak) Forward Current IFM 200 Average Forward Current IO 100 Surge Current (10ms) IFSM 1 Power Dissipation PD 150* Junction Temperature Tj 125 Storage Temperature Range Tstg -55 125 * : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm.
UNIT V V mA mA A mW CATHODE MARK B A GG KDR367E SCHOTTKY BARRIER TYPE DIODE C 1 2 D 1.
ANODE 2.
CATHODE E F DIM A B C D E F G MILLIMETERS 1.
60 +_0.
10 1.
20 +_0.
10 0.
80 +_0.
10 0.
30+_ 0.
05 0.
60+_ 0.
10 0.
13+_ 0.
05 0.
20+_ 0.
10 ESC Marking Type Name US ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current VF(1) VF(2) VF(3) IR Total Capacitance CT TEST CONDITION IF=1mA IF=5mA IF=100mA VR=10V VR=0V, f=1MHz MIN.
- TYP.
0.
18 0.
23 0.
35 20 MAX.
- 0.
30 0.
50 20 40 UNIT V A pF 2014.
3.
31 Revision No : 2 1/2 FORWARD CURRENT IF (A) Ta=-T2a5T=a0=TCa2=5TCa5T0a=C7=51C00C C KDR367E 100m IF - VF 10m 1m 100µ 10µ 0 0.
1 0.
2 0.
3 0.
4 FORWARD VOLTAGE VF (V) 0.
5 CT - VR 40 f=1MHz Ta=25 C 30 20 10 0 10m 30m 0.
1 0.
3 1 3 10 20 REVERSE VOLTAGE VR (R) POWER DISSIPATION P (mW) REVERSE CURRENT IR (A) 1m 100µ 10µ 1µ 100n 10n 0 IR - VR Ta=100 C Ta=75 C Ta=50 C Ta=25 C Ta=0 C Ta=-25 C 2 4 6 8 10 REVERSE VOLTAGE VR (V) P - Ta 240 Mounted on a glass 200 epoxy circuit board of 20`20mm, pad dimension 4`4mm.
160 120 80 40 0 50 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) CAPACITANCE CT (pF) 2014.
3.
31 Revision No : 2 2/2 ...



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