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KDV300E

KEC
Part Number KDV300E
Manufacturer KEC
Description Silicon Diode
Published Mar 25, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA TV Tuning. FEATURES High Capacitance Ratio : C2V/C25V=14.5(Min.) Low Series Resistance : rs...
Datasheet PDF File KDV300E PDF File

KDV300E
KDV300E

Overview
SEMICONDUCTOR TECHNICAL DATA TV Tuning.
FEATURES High Capacitance Ratio : C2V/C25V=14.
5(Min.
) Low Series Resistance : rs=1.
1 (Max.
) Small Package : ESC.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL VR Tj Tstg RATING 32 150 -55 150 UNIT V KDV300E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK B A C 1 2 D 1.
ANODE 2.
CATHODE E F DIM A B C D E F MILLIMETERS 1.
60+_ 0.
10 1.
20+_ 0.
10 0.
80+_ 0.
10 0.
30+_ 0.
05 0.
60+_ 0.
10 0.
13+_ 0.
05 ESC Marking Type Name VC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Reverse Current Capacitance IR1 IR2 C2V C25V VR=30V VR=30V, Ta=60 VR=2V, f=1MHz VR=25V, f=1MHz Capacitance Ratio C2V/C25V - Series Resistance rS VR=5V, f=470MHz Note : Available in matched group for capacitance to 2.
0%.
C(Max.
)-C(Min.
) 0.
02 C(Min.
) (VR=2~25V) MIN.
- 39.
5 2.
60 14.
5 - TYP.
- MAX.
10 100 47.
4 3.
03 1.
1 UNIT nA pF 2004.
4.
20 Revision No : 0 1/2 REVERSE CURRENT IR (A) KDV300E -9 10 -10 10 -11 10 -12 10 -13 10 0 I R - VR 10 20 30 REVERSE VOLTAGE VR (V) 40 TOTAL CAPACITANCE CT (pF) 60 50 40 30 20 10 0 0.
5 C T - VR f=1MHz 1 10 REVERSE VOLTAGE VR (V) 30 1.
2 1.
0 0.
8 0.
6 0.
4 0.
2 0 0.
5 r s - VR f=470MHz 1 10 REVERSE VOLTAGE VR (V) 30 ∆(LOG CT) / ∆(LOG VR) ∆(LOG CT) / ∆(LOG VR) - VR 0 -0.
5 -1.
0 -1.
5 0.
5 1 10 REVERSE VOLTAGE VR (V) 30 SERIES RESISTANCE rs (Ω) 2004.
4.
20 Revision No : 0 2/2 ...


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