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KDS193

KEC
Part Number KDS193
Manufacturer KEC
Description SILICON EPITAXIAL PLANAR DIODE
Published Mar 26, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small Package : SOT-23. Low Forward Voltag...
Datasheet PDF File KDS193 PDF File

KDS193
KDS193


Overview
SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Small Package : SOT-23.
Low Forward Voltag : VF=0.
9V(Typ.
).
Fast Reverse Recovery Time : trr=1.
6ns(Typ.
).
Small Total Capacitance : CT=0.
9pF(Typ.
).
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 85 80 300 100 2 150 150 -55 150 UNIT V V mA mA A mW KDS193 SILICON EPITAXIAL PLANAR DIODE E L BL DIM MILLIMETERS A 2.
93+_ 0.
20 B 1.
30+0.
20/-0.
15 A G H D 23 C 1.
30 MAX D 0.
40+0.
15/-0.
05 E 2.
40+0.
30/-0.
20 1 G 1.
90 H 0.
95 J 0.
13+0.
10/-0.
05 K 0.
00 ~ 0.
10 Q PP L 0.
55 M 0.
20 MIN N 1.
00+0.
20/-0.
10 C N K J P7 Q 0.
1 MAX M 1.
NC 2.
CATHODE 3.
ANODE 3 21 SOT-23 Marking Type Name F3 Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time VF(1) VF(2) VF(3) IR CT trr TEST CONDITION IF=1mA IF=10mA IF=100mA VR=80V VR=0, f=1MHz IF=10mA MIN.
- TYP.
0.
60 0.
72 0.
90 0.
9 1.
6 MAX.
- 1.
20 0.
5 3.
0 4.
0 UNIT V A pF ns 2012.
3.
29 Revision No : 2 1/2 KDS193 2012.
3.
29 Revision No : 2 2/2 ...


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