2SK3151
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS (on) = 11.5 mΩ typ.
High speed switching 4 V gate drive device can be driven from 5 V source
REJ03G1076-0400 (Previous: ADE-208-747B)
Rev.4.00 Sep 07, 2005
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
1. Gate G 2. Drain
(Flange) 3. Sour...
