N-Channel MOSFET
Description
HFD630_HFU630
Dec 2012
HFD630 / HFU630
200V N-Channel MOSFET
BVDSS = 200 V RDS(on) typ ȍ ID = 7.2 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area ...
Similar Datasheet