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HFP10N80

SemiHow
Part Number HFP10N80
Manufacturer SemiHow
Description N-Channel MOSFET
Published Apr 18, 2016
Detailed Description HFP10N80 Dec 2010 HFP10N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ ȍ ID = 9.4 A FEATURES ‰ Originativ...
Datasheet PDF File HFP10N80 PDF File

HFP10N80
HFP10N80

Overview
HFP10N80 Dec 2010 HFP10N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ ȍ ID = 9.
4 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 58 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested TO-220 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚͑ – Continuous (TC = 100ఁ͚͑ – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 800 9.
4 5.
9 36.
0 ρͤ͑͡ 920 9.
4 19.
5 4.
5 PD TJ, TSTG TL Power Dissipation (TC = 25ఁ͚͑ ͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 195 1.
56 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W/ఁ͑ ఁ͑ ఁ͑ Thermal Resistance Characteristics Symbol RșJC RșCS RșJA Junction-to-Case Parameter Case-to-Sink Junction-to-Ambient Typ.
-0.
5 -- Max.
0.
64 -62.
5 Units ఁ͠Έ͑ క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣ͑͢͡͡ HFP10N80 Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 Ꮃ͑ VGS = 10 V, ID = 4.
7 A͑ 2.
5 -- Off Characteristics BVDSS ԩBVDSS /ԩTJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 Ꮃ͑ ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ͑ VDS = 800 V, VGS = 0 V͑ VDS = 640 V, TC = 125ఁ͑ VGS = 30 ...


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