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HFP8N60U

SemiHow
Part Number HFP8N60U
Manufacturer SemiHow
Description N-Channel MOSFET
Published Apr 18, 2016
Detailed Description HFP8N60U HFP8N60U 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robu...
Datasheet PDF File HFP8N60U PDF File

HFP8N60U
HFP8N60U

Overview
HFP8N60U HFP8N60U 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 22.
0 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested August 2012 BVDSS = 600 V RDS(on) typ ȍ ID = 7.
5 A TO-220 1 23 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 7.
5 4.
7 30.
0 ρ30 280 7.
5 15.
0 4.
5 PD Power Dissipation (TC = 25୅) - Derate above 25୅ 150 1.
2 TJ, TSTG TL Operati...


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