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RU1H35K

Part Number	RU1H35K
Manufacturer	Ruichips
Description	N-Channel Advanced Power MOSFET
Published	Apr 25, 2016
Detailed Description	RU1H35K N-Channel Advanced Power MOSFET Features • 100V/40A, RDS (ON) =21mΩ(Typ.)@VGS=10V • Super High Dense Cell Desig...
Datasheet	RU1H35K PDF File

Overview

RU1H35K N-Channel Advanced Power MOSFET Features • 100V/40A, RDS (ON) =21mΩ(Typ.
)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description Applications • High Speed Power Switching GDS TO251 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junct...

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