RU30E4B
N-Channel Advanced Power MOSFET
Features
30V/4A,
RDS (ON) =30mΩ(Typ.)@VGS=10V RDS (ON) =55mΩ(Typ.)@VGS=4.5V
Super High Dense Cell Design ESD protected(Rating 2KV HBM) Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
Applications
Load Switch
Pin Description
D
G S
SOT23
D G
Absolute Maximum Ratings
Symbol
Para...
