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BAV20WS

Taiwan Semiconductor
Part Number BAV20WS
Manufacturer Taiwan Semiconductor
Description 200mW High Voltage SMD Switching Diode
Published Apr 28, 2016
Detailed Description BAV19WS/BAV20WS/BAV21WS Taiwan Semiconductor 200mA, 120-250V High Voltage SMD Switching Diode FEATURES ● Low power loss...
Datasheet PDF File BAV20WS PDF File

BAV20WS
BAV20WS

Overview
BAV19WS/BAV20WS/BAV21WS Taiwan Semiconductor 200mA, 120-250V High Voltage SMD Switching Diode FEATURES ● Low power loss, high efficiency ● Ideal for automated placement ● High surge current capability ● Moisture sensitivity level: level 1, per J-STD-020 ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● Lighting application ● On-board DC/DC converter KEY PARAMETERS PARAMETER VALUE UNIT IF(AV) VRRM IFSM VF at IF=200mA TJ MAX.
Package 200 mA 120-250 V 2.
5 A 1.
25 V 150 °C SOD-323F Configuration Single die MECHANICAL DATA ● Case: SOD-323F ● Molding compound meets UL 94 V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 1A whisker test ● Polarity: Indicated by cathode band ● Weight: 4.
5 ± 0.
5 mg (approximately) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL BAV19WS BAV20WS Marking code on the device S5 S6 Power dissipation Average forward current PD 200 IF 200 Repetitive peak reverse voltage Pulse Width = 1 s , Peak forward surge Square Wave current Pulse Width = 1 μs , Square Wave VRRM IFSM 120 200 0.
5 2.
5 Junction temperature range TJ -65 to +150 Storage temperature range TSTG -65 to +150 BAV21WS S7 250 UNIT mW mA V A °C °C 1 Version: I1804 BAV19WS/BAV20WS/BAV21WS Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL Forward voltage per diode (1) IF = 100mA, TJ = 25°C IF = 200mA, TJ = 25°C VF BAV19WS Reverse voltage BAV20WS IR=100µA, TJ = 25°C VR BAV21WS Reverse current (2) BAV19WS BAV20WS BAV21WS VR=100V TJ = 25°C VR=150V TJ = 25°C VR=200V TJ = 25°C IR Junction capacitance Reverse recovery time Notes: 1.
Pulse test with PW=0.
3 ms 2.
Pulse test with PW=30 ms 1 MHz, VR=0V IF=IR=30mA, RL=100Ω, IRR=3mA CJ trr MIN - 120 200 250 - - MAX 1.
00 1.
25 - ...


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