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BCW61

SEMTECH
Part Number BCW61
Manufacturer SEMTECH
Description PNP Silicon Epitaxial Planar Transistors
Published Apr 30, 2016
Detailed Description BCW61 PNP Silicon Epitaxial Planar Transistors for general purpose switching and amplification. These transistors are su...
Datasheet PDF File BCW61 PDF File

BCW61
BCW61

Overview
BCW61 PNP Silicon Epitaxial Planar Transistors for general purpose switching and amplification.
These transistors are subdivided into three groups B, C and D, according to their current gain.
As complementary types the NPN transistors BCW60 are recommended.
SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -ICM -IBM Ptot TJ TS Value 32 32 5 100 200 100 200 150 -65 to +150 Unit V V V mA mA mA mW OC OC SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 21/12/2005 BCW61 Characteristics at Ta = 25 OC Parameter Symbol Min.
Typ.
Max.
Unit DC Current Gain at -VCE = 5 V, -IC = 10 µA at -VCE = 5 V, -IC = 2 mA at -VCE = 1 V, -IC = 50 mA BCW61B BCW61C BCW61D BCW61B BCW61C BCW61D BCW61B BCW61C BCW61D hFE 30 - - - hFE 40 - - - hFE 100 - - - hFE 180 - 310 - hFE 250 - 460 - hFE 380 - 630 - hFE 80 - - - hFE 100 - - - hFE 110 - - - Collector Saturation Voltage at -IC = 10 mA, -IB = 0.
25 mA Collector Saturation Voltage at -IC = 50 mA, -IB = 1.
25 mA Base Saturation Voltage at -IC = 10 mA, -IB = 0.
25 mA Base Saturation Voltage at -IC = 50 mA, -IB = 1.
25 mA Base-Emitter Voltage at -IC = 2 mA, -VCE = 5 V Collector Base Cutoff Current at -VCB = 32 V at -VCB = 32 V,Tj = 150 OC Emitter-Base Cutoff Current at -VEB = 4 V -VCEsat 0.
06 -VCEsat 0.
12 -VBEsat 0.
6 -VBEsat 0.
68 -VBE(on) 0.
6 -ICBO -ICBO - -IEBO - - - 0.
25 0.
55 0.
85 1.
05 0.
75 20 20 20 V V V V V nA µA nA Gain -Bandwidth Product at -VCE = 5 V, -IC = 10 mA, f = 100 MHz fT 100 - - MHz Collector-Base Capacitance at -VCB = 10 V, f = 1 MHz CCBO - 4.
5 - pF Emitter-Base Capacitance at -VEB = 0.
5 V, f = 1 MHz CEBO - 11 - ...


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