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N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 2.5mΩ (typ.) (VGS = 10 V) ·Enhancement mode: Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.7mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤9.5mΩ. (VGS = 10 V) ·Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switchin |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 11.0 mΩ (typ.) (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION |
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INCHANGE |
N-Channel MOSFET ·With TO-247 packaging ·With low gate drive requirements ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM R |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 3.1mΩ (MAX) (VGS = 10 V) ·Enhancement mode: Vth = 1.4 to 2.4V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·S |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤4.9Ω. ·Enhancement mode: Vth = 2.5 to4.0V (VDS = 10 V, ID=0.3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regu |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤0.088Ω. ·Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=15.4A) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Re |
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INCHANGE |
N-Channel MOSFET ·With TO-247 packaging ·Easy to use ·High speed switching ·Very high commutation ruggedness ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power sup |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤4.6Ω. ·Enhancement mode: Vth = 2.5 to4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Reg |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) = 2.2Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volt |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 7.9 mΩ (typ.) (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤15.0mΩ. (VGS = 10 V) ·Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=0.2mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switchi |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 12.2mΩ (typ.) (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.2mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 3Ω (MAX) (VGS = 10 V) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Swit |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 3.1mΩ (MAX) (VGS = 10 V) ·Enhancement mode: Vth = 1.4 to 2.4V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·S |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤0.074Ω. ·Enhancement mode: Vth =3 to4.5V (VDS = 10 V, ID=1.9mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regul |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 57mΩ (MAX) ·Enhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=2.1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 55mΩ (MAX) ·Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=2.1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volta |
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INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 500V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 60mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤0.074Ω. ·Enhancement mode: Vth =3 to4.5V (VDS = 10 V, ID=1.9mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regul |
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