Infineon AUI datasheet

No.	Part #	Manufacturer	Description
1	AUIRFZ44N	Infineon	Power MOSFET  Advanced Planar Technology  Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Descrip
2	AUIRF7303Q	Infineon	Dual N-Channel MOSFET  Advanced Planar Technology  Dual N Channel MOSFET  Low On-Resistance  Logic Level Gate Drive  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotiv
3	AUIRFU540Z	Infineon	Power MOSFET of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a
4	AUIRF7309Q	Infineon	Dual N/P-Channel MOSFET  Advanced Planar Technology  Low On-Resistance  Logic Level Gate Drive  Dual N and P Channel MOSFET  Dynamic dv/dt Rating  150°C Operating Temperature  Fast Switching  Lead-Free, RoHS Compliant  Automotive Qualified * AUTOMOTIVE GRADE AUIR
5	AUIRLR024N	Infineon	Power MOSFET  Advanced Planar Technology  Low On-Resistance  Logic-Level Gate Drive  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotiv
6	AUIRF7304Q	Infineon	Dual P-Channel MOSFET  Advanced Planar Technology  Low On-Resistance  Dual P Channel MOSFET  Dynamic dv/dt Rating  Logic Level  150°C Operating Temperature  Fast Switching  Lead-Free, RoHS Compliant  Automotive Qualified * AUTOMOTIVE GRADE AUIRF7304Q S1 G1 S
7	AUIRF4905	Infineon	Power MOSFET  Advanced Planar Technology  Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Descrip
8	AUIRL1404ZS	Infineon	Power MOSFET  Logic Level  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed
9	AUIRF2903ZL	Infineon	Power MOSFET  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive ap
10	AUIRF7647S2TR	Infineon	Power MOSFET combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems. Base Part Number Package Type Standard Pack Form Quantity Orderable Part Number AUIRF7647S2 DirectFET Small Can Tape and Reel 4800
11	AUIRF1404ZS	Infineon	Power MOSFET  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotiv
12	AUIRF1404L	Infineon	Power MOSFET  Advanced Planar Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically de
13	AUIRF7316Q	Infineon	Dual P-Channel MOSFET  Advanced Planar Technology  Low On-Resistance  Logic Level Gate Drive  Dual P Channel MOSFET  Surface Mount  Available in Tape & Reel  150°C Operating Temperature  Lead-Free, RoHS Compliant  Automotive Qualified * S1 G1 S2 G2 Descriptio
14	AUIRLL024N	Infineon	Power MOSFET  Advanced Planar Technology  Low On-Resistance  Logic Level Gate Drive  Dynamic dv/dt Rating  150°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotiv
15	AUIRLL024Z	Infineon	Power MOSFET  Advanced Process Technology  Ultra Low On-Resistance  Logic Level Gate Drive  150°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifical
16	AUIRLU024N	Infineon	Power MOSFET  Advanced Planar Technology  Low On-Resistance  Logic-Level Gate Drive  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotiv
17	AUIRLU024Z	Infineon	Power MOSFET  Logic Level  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed
18	AUIRLR2905	Infineon	Power MOSFET  Advanced Planar Technology  Logic Level Gate Drive  Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotiv
19	AUIRLS3036-7P	Infineon	Power MOSFET  Advanced Process Technology  Ultra Low On-Resistance  Logic Level Gate Drive  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *
20	AUIRFZ24NS	Infineon	Power MOSFET  Advanced Planar Technology  Low On-Resistance  Dynamic dV/dT and dI/dT capability  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified