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AUIRF7309Q

Infineon
Part Number AUIRF7309Q
Manufacturer Infineon
Description Dual N/P-Channel MOSFET
Published Dec 1, 2016
Detailed Description   Features  Advanced Planar Technology  Low On-Resistance  Logic Level Gate Drive  Dual N and P Channel MOSFET  Dyn...
Datasheet PDF File AUIRF7309Q PDF File

AUIRF7309Q
AUIRF7309Q

Overview
  Features  Advanced Planar Technology  Low On-Resistance  Logic Level Gate Drive  Dual N and P Channel MOSFET  Dynamic dv/dt Rating  150°C Operating Temperature  Fast Switching  Lead-Free, RoHS Compliant  Automotive Qualified * AUTOMOTIVE GRADE AUIRF7309Q   S1 G1 N-CHANNEL MOSFET 18 27 D1 D1 VDSS N-CH 30V P-CH -30V S2 3 G2 4 6 D2 5 D2 RDS(on) max.
0.
05 0.
10 P-CHANNEL MOSFET Top View ID 4.
7A -3.
5A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
SO-8 AUIRF7309Q G Gate D Drain S Source Base part number AUIRF7309Q Package ...


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