BUZ42

BUZ40 : BUZ 40 B SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 40 B VDS 500 V ID 8.5 A RDS(on) 0.8 Ω Package TO-220 AB Ordering Code C67078-S1305-A4 Maximum Ratings Parameter Continuous drain current Symbol Values 8.5 Unit A ID IDpuls 34 TC = 35 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 10 13 mJ ID = 10 A, VDD = 50 V, RGS = 25 Ω L = 10.3 mH, Tj = 25 °C Gate source voltage Power dissipation 570 VGS Ptot ± 20 150 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal .

BUZ40B : BUZ 40 B SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 40 B VDS 500 V ID 8.5 A RDS(on) 0.8 Ω Package TO-220 AB Ordering Code C67078-S1305-A4 Maximum Ratings Parameter Continuous drain current Symbol Values 8.5 Unit A ID IDpuls 34 TC = 35 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 10 13 mJ ID = 10 A, VDD = 50 V, RGS = 25 Ω L = 10.3 mH, Tj = 25 °C Gate source voltage Power dissipation 570 VGS Ptot ± 20 150 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal .

BUZ40B : isc N-Channel Mosfet Transistor BUZ40B ·FEATURES ·SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.This type can be operated directly from integrated circuits. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current.

BUZ41A : BUZ 41 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 41 A VDS 500 V ID 4.5 A RDS(on) 1.5 Ω Package TO-220 AB Ordering Code C67078-S1306-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 4.5 Unit A ID IDpuls 18 TC = 36 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 4.5 8 mJ ID = 4.5 A, VDD = 50 V, RGS = 25 Ω L = 28.4 mH, Tj = 25 °C Gate source voltage Power dissipation 320 VGS Ptot ± 20 75 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal .

BUZ41A : BUZ41A Semiconductor Data Sheet October 1998 File Number 2256.1 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET Features • 4.5A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 1.500Ω (BUZ41 field effect transistor designed for applications such as • SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Sub• Nanosecond Switching Speeds relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ject • Linear Transfer Characteristics (4.5A, This type can be operated directly from integrated circuits. • High Input Impedance 500V, Formerly developmental type .

BUZ41A : BUZ41A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ41A Voss 500 V ROS(on) 1.5 D 10 4.5 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION AT100KHz • EASY DRIVE - FOR REDUCED COST AND COST INDUSTRIAL APPLICATIONS: • SWITCHING POWER SUPPLIES • MOTOR CONTROLS N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical applications include switching power supplies and motor speed control. , TO-220 INTERNAL SCHEMATIC DIAGRAM s ABSOLUTE MAXIMUM RATINGS Vos VOGR VGS 10 10M Ptot Tstg Tj Drain-source voltage (VGS =0) Drain-gat.

BUZ41A : isc N-Channel Mosfet Transistor BUZ41A ·FEATURES ·SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.This type can be operated directly from integrated circuits. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current.

BUZ42 : BUZ 42 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 42 VDS 500 V ID 4A RDS(on) 2Ω Package TO-220 AB Ordering Code C67078-S1311-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 4 Unit A ID IDpuls 16 TC = 30 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 4 6 mJ ID = 4 A, VDD = 50 V, RGS = 25 Ω L = 24.8 mH, Tj = 25 °C Gate source voltage Power dissipation 220 VGS Ptot ± 20 75 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip.

BUZ42 : BUZ42 Semiconductor Data Sheet October 1998 File Number 2417.1 4A, 500V, 2.000 Ohm, N-Channel Power MOSFET Features • 4A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 2.000Ω (BUZ42 field effect transistor designed for applications such as • SOA is Power Dissipation Limited ) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching • Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (4A, • Linear Transfer Characteristics This type can be operated directly from integrated circuits. 500V, • High Input Impedance 2.000 Formerly developmental type T.

BUZ42 : isc N-Channel Mosfet Transistor BUZ42 ·FEATURES ·4A, 500V ·SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=55℃ 4.0 A IDM Drain Current-Sin.

BUZ44A : .

BUZ44A : isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) ·SOA is Power Dissipation Limited ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 4.8 A IDM Drain Current-Single Plused 19 A Ptot .

BUZ45 : BUZ45 Semiconductor Data Sheet October 1998 File Number 2257.1 9.6A, 500V, 0.600 Ohm, N-Channel Power MOSFET Features • 9.6A, 500V [ /Title IThis is an N-Channel enhancement mode silicon gate • rDS(ON) = 0.600Ω (BUZ45) power field effect transistor designed for applications such • SOA is Power Dissipation Limited /Subject as switching regulators, switching converters, motor drivers, • Nanosecond Switching Speeds (9.6A, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 500V, • Linear Transfer Characteristics This type can be operated directly from integrated circuits. 0.600 • High Input Impedance Ohm, N- Formerly develo.

BUZ45 : BUZ45 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE I BUZ45 I Voss 500 V ROS(on) 0.6 0 10 9.6 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION AT100KHz • EASY DRIVE - FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • SWITCH MODE POWER SUPPLIES • MOTOR CONTROLS N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical applications include switching power supplies and motor speed control. TO-3 INTERNAL SCHEMATIC DIAGRAM 5 ABSOLUTE MAXIMUM RATINGS Vos VOGR VGS 10 10M Ptot Tstg Tj Drain-source voltage (VGS =0) Drain-gat.

BUZ45 : isc N-Channel Mosfet Transistor INCHANGE Semiconductor BUZ45 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·SOA is Power Dissipation Limited ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 9.6 A IDM Drain Curren.

BUZ45A : BUZ45A Semiconductor Data Sheet October 1998 File Number 2258.1 8.3A, 500V, 0.800 Ohm, N-Channel Power MOSFET Features • 8.3A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.800Ω (BUZ45 field effect transistor designed for applications such as • SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching • Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (8.3A, • Linear Transfer Characteristics This type can be operated directly from integrated circuits. 500V, • High Input Impedance 0.800 Formerly developmenta.